92612 tkim/72606/32406ea msim tb-00002174 no.8953-1/8 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 mch6545 bipolar transistor (?) 50v, (?) 1a, low v ce ( sat ) complementary dual mcph6 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applicaitons ? mosfet gate drivers, relay drivers, lamp drivers, motor drivers features ? composite type with a pnp transistor and an npn transistor contained in one package facilitating high-density mounting ? ultrasmall package allows applied sets to be made small and thin speci cations ( ) : pnp absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)500 ma collector current (pulse) i cp (--)1.0 a collector dissipation p c when mounted on ceramic substrate (600mm 2 0.8mm) 0.5 w total power dissipation p t when mounted on ceramic substrate (600mm 2 0.8mm) 0.55 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7022a-011 ordering number : EN8953A product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection et lot no. lot no. tl 1 : emitter1 2 : base1 3 : collector2 4 : emitter2 5 : base2 6 : collector1 mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 5 6 1 4 23 mch6545-tl-e
mch6545 no.8953-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)2v, i c =(--)10ma (200)300 (500)700 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma (690)500 mhz output capacitance cob v cb =(--)10v, f=1mhz (3.8)2.8 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)100ma, i b =(--)10ma (--60)50 (--120)100 mv base-to-emitter saturation voltage v be (sat) i c =(--)100ma, i b =(--)10ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v turn-on time t on see speci ed test circuit. (30)30 ns storage time t stg (170)340 ns fall time t f (30)55 ns switching time test circuit ordering information device package shipping memo mch6545-tl-e mcph6 3,000pcs./reel pb free v r r b v cc =25v v be = --5v ++ 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =200ma for pnp, the polarit y is reversed. collector-to-emitter voltage, v ce -- mv collector current, i c -- ma 0 0 --100 --50 i c -- v ce it05118 --200 --150 --300 --250 --500 --450 --400 --350 --200 --600 --400 --800 --1000 --100 --500 --300 --700 --900 i b =0 a --200 a --1ma --500 a --2ma --5ma --10ma --15ma --50ma --30ma --20ma --25ma --40ma [pnp] [npn] i c -- v ce it05106 collector-to-emitter voltage, v ce -- mv collector current, i c -- ma 0 0 350 400 300 200 250 500 450 200 150 100 50 500 1000 800 900 100 300 400 600 700 i b =0 a 200 a 600 a 1ma 2ma 3ma 5ma 7ma 8ma 30ma 20ma 15ma 10ma
mch6545 no.8953-3/8 it05123 v ce (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 --1000 --100 2 3 5 7 2 3 5 7 --10 7 ta=75 c --25 c 25 c i c / i b =20 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe it05119 0 0 i c -- v be --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --200 --600 --500 --400 --300 --100 ta=75 c 25 c --25 c v ce = --2v it05120 3 100 h fe -- i c --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 --100 --1000 2 3 5 1000 7 5 7 ta=75 c 25 c --25 c v ce = --2v it05410 --1.0 23 57 --10 23 57 23 57 --100 --100 2 2 3 5 7 3 --10 ta=75 c --25 c 25 c i c / i b =10 v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv [pnp] [pnp] [pnp] [pnp] h fe -- i c it05108 i c -- v be it05107 base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe 1.0 10 100 1000 3 257 3 257 3 257 1000 100 10 2 3 5 7 2 3 5 7 0 200 300 600 500 400 100 0 0.2 0.4 0.6 0.8 1.2 1.0 ta=75 c --25 c 25 c v ce =2v v ce =2v ta=75 c 25 c --25 c it05411 1.0 23 5 10 100 72357 1000 23 57 2 5 7 5 7 3 2 100 3 10 --25 c 25 c ta=75 c i c / i b =10 v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv v ce (sat) -- i c it05109 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv 1.0 23 5 10 100 72357 1000 23 57 2 5 7 3 2 100 3 10 --25 c 25 c ta=75 c i c / i b =20 [npn] [npn] [npn] [npn]
mch6545 no.8953-4/8 collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- ma gain-bandwidth product, f t -- mhz it05122 --1.0 1.0 cob -- v cb --10 2 3 5 7 2 3 5 7 --100 2 3 5 7 10 f=1mhz it05124 v ce (sat) -- i c it05125 v be (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 3 --1000 2 3 5 7 2 3 5 7 2 --100 --10 i c / i b =50 ta=75 c --25 c 25 c 2 --1.0 3 5 7 2 --1.0 23 57 --10 23 57 23 57 --100 --1000 ta= --25 c 75 c 25 c i c / i b =20 it05121 --1.0 f t -- i c 2 3 57 2 3 57 2 3 57 --10 --100 --1000 100 1000 5 7 2 3 v ce = --10v [pnp] [pnp] [pnp] [pnp] f t -- i c it05113 cob -- v cb it05112 v ce (sat) -- i c it05110 collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma collector current, i c -- ma output capacitance, cob -- pf collector-to-base voltage, v cb -- v gain-bandwidth product, f t -- mhz it05111 v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v 1.0 5 3 100 1000 7 5 3 2 1000 100 27 5 3 27 5 3 27 10 27 35 2 7 35 10 100 1.0 10 1.0 7 5 3 2 1.0 23 5 357 10 272357 100 1000 10 1.0 0.1 7 5 3 2 7 5 3 2 75 c ta= --25 c 25 c i c / i b =20 f=1mhz v ce =10v it05110 1000 2 3 100 7 5 2 3 7 5 10 1.0 23 5 10 100 7 23 5 7 23 5 7 1000 i c / i b =50 --25 c 25 c ta=75 c [npn] [npn] [npn] [npn]
mch6545 no.8953-5/8 0.6 0 0.1 0.2 0.3 0.4 0.5 0.55 0 20 40 60 80 100 120 140 160 it10744 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 1unit mounted on a ceramic board (600mm 2 ? 0.8mm) total dissipation f=1mhz --0.1 0.1 base current, i b -- m a ron -- i b on resistance, ron -- it06093 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 --1.0 --10 out in 1k 1k i b [pnp] [pnp/npn] base current, i b -- m a ron -- i b on resistance, ron -- f=1mhz 0.1 0.1 it06092 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 1.0 10 out in 1k 1k i b [npn]
mch6545 no.8953-6/8 embossed taping speci cation mch6545-tl-e
mch6545 no.8953-7/8 outline drawing land pattern example mch6545-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
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